An-Najah University Journal for Research - A (Natural Sciences)

Effect of Pressure and Temperature on Preparing PZT Films
Authors:

Article info

2000-05-09
2002-01-02
2002-01-02
91 - 101

Keywords

Abstract

Ferroelectrics lead zirconate titanate (PZT) thin films were fabricated by pulsed laser deposition on Pt coated Si substrate. The effect of oxygen partial pressure, substrate temperature and time of ablation on the film orientation and composition will be presented. It was found that highly (111) textured PZT films could be grown with careful selection of ablation conditions which are: the oxygen pressure is 300 mT, substrate temperature is 605 C and the ablation time is 16 minutes.

Recommended Citation

Musameh, S. (2002). Effect of Pressure and Temperature on Preparing PZT Films. An-Najah University Journal for Research - A (Natural Sciences), 16(2), 91–101. https://doi.org/10.35552/anujr.a.16.2.657
[1]S. Musameh, “Effect of Pressure and Temperature on Preparing PZT Films,” An-Najah University Journal for Research - A (Natural Sciences), vol. 16, no. 2, pp. 91–101, Jan. 2002, doi: 10.35552/anujr.a.16.2.657.
Musameh, Sharif. “Effect of Pressure and Temperature on Preparing PZT Films.” An-Najah University Journal for Research - A (Natural Sciences), vol. 16, no. 2, Jan. 2002, pp. 91–101. Crossref, https://doi.org/10.35552/anujr.a.16.2.657.
1.Musameh S. Effect of Pressure and Temperature on Preparing PZT Films. An-Najah University Journal for Research - A (Natural Sciences) [Internet]. 2002 Jan;16(2):91–101. Available from: http://dx.doi.org/10.35552/anujr.a.16.2.657
Musameh, Sharif. “Effect of Pressure and Temperature on Preparing PZT Films.” An-Najah University Journal for Research - A (Natural Sciences) 16, no. 2 (January 2002): 91–101. https://doi.org/10.35552/anujr.a.16.2.657.

Effect of Pressure and Temperature on Preparing PZT Films
المؤلفون:

معلومات المقال

2000-05-09
2002-01-02
2002-01-02
91 - 101

الكلمات الإفتتاحية

الملخص

Ferroelectrics lead zirconate titanate (PZT) thin films were fabricated by pulsed laser deposition on Pt coated Si substrate. The effect of oxygen partial pressure, substrate temperature and time of ablation on the film orientation and composition will be presented. It was found that highly (111) textured PZT films could be grown with careful selection of ablation conditions which are: the oxygen pressure is 300 mT, substrate temperature is 605 C and the ablation time is 16 minutes.

Recommended Citation

Musameh, S. (2002). Effect of Pressure and Temperature on Preparing PZT Films. An-Najah University Journal for Research - A (Natural Sciences), 16(2), 91–101. https://doi.org/10.35552/anujr.a.16.2.657
[1]S. Musameh, “Effect of Pressure and Temperature on Preparing PZT Films,” An-Najah University Journal for Research - A (Natural Sciences), vol. 16, no. 2, pp. 91–101, Jan. 2002, doi: 10.35552/anujr.a.16.2.657.
Musameh, Sharif. “Effect of Pressure and Temperature on Preparing PZT Films.” An-Najah University Journal for Research - A (Natural Sciences), vol. 16, no. 2, Jan. 2002, pp. 91–101. Crossref, https://doi.org/10.35552/anujr.a.16.2.657.
1.Musameh S. Effect of Pressure and Temperature on Preparing PZT Films. An-Najah University Journal for Research - A (Natural Sciences) [Internet]. 2002 Jan;16(2):91–101. Available from: http://dx.doi.org/10.35552/anujr.a.16.2.657
Musameh, Sharif. “Effect of Pressure and Temperature on Preparing PZT Films.” An-Najah University Journal for Research - A (Natural Sciences) 16, no. 2 (January 2002): 91–101. https://doi.org/10.35552/anujr.a.16.2.657.

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