Effect of Pressure and Temperature on Preparing PZT Films
Abstract
Ferroelectrics lead zirconate titanate (PZT) thin films were fabricated by pulsed laser deposition on Pt coated Si substrate. The effect of oxygen partial pressure, substrate temperature and time of ablation on the film orientation and composition will be presented. It was found that highly (111) textured PZT films could be grown with careful selection of ablation conditions which are: the oxygen pressure is 300 mT, substrate temperature is 605 C and the ablation time is 16 minutes.
Article history
- Received
- 2000-05-09
- Accepted
- 2002-01-02
- Available online
- 2002-01-02
Effect of Pressure and Temperature on Preparing PZT Films
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Effect of Pressure and Temperature on Preparing PZT Films
الملخص
Ferroelectrics lead zirconate titanate (PZT) thin films were fabricated by pulsed laser deposition on Pt coated Si substrate. The effect of oxygen partial pressure, substrate temperature and time of ablation on the film orientation and composition will be presented. It was found that highly (111) textured PZT films could be grown with careful selection of ablation conditions which are: the oxygen pressure is 300 mT, substrate temperature is 605 C and the ablation time is 16 minutes.
Article history
- تاريخ التسليم
- 2000-05-09
- تاريخ القبول
- 2002-01-02
- Available online
- 2002-01-02