An-Najah University Journal for Research - A (Natural Sciences)

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The Electronic Structure of Gax In 1-x As and InASx P1-x Using the Recursion Method
DOI:
10.35552/anujr.a.9.1.413
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7 - 19

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Abstract

The calculation of the electronic structure of Gax In 1-x As and In Asx P1-x alloys using the recursion method is reported. A five-orbitals, sp3s*, per atom model is used in the tight-binding representation of the Hamiltonian. The local density of states is calculated for Ca, In, As and P-sites in a cluster of 216 atoms. The results are in good agreement with other calculations.

Recommended Citation

BibTex RIS
Hasan, M. A.-. (1995). The Electronic Structure of Gax In 1-x As and InASx P1-x Using the Recursion Method. An-Najah University Journal for Research - A (Natural Sciences), 9(1), 7–19. https://doi.org/10.35552/anujr.a.9.1.413
[1]M. A.- Hasan, “The Electronic Structure of Gax In 1-x As and InASx P1-x Using the Recursion Method,” An-Najah University Journal for Research - A (Natural Sciences), vol. 9, no. 1, pp. 7–19, Jan. 1995, doi: 10.35552/anujr.a.9.1.413.
Hasan, Mousa Al-. “The Electronic Structure of Gax In 1-x As and InASx P1-x Using the Recursion Method.” An-Najah University Journal for Research - A (Natural Sciences), vol. 9, no. 1, Jan. 1995, pp. 7–19. Crossref, https://doi.org/10.35552/anujr.a.9.1.413.
1.Hasan MA. The Electronic Structure of Gax In 1-x As and InASx P1-x Using the Recursion Method. An-Najah University Journal for Research - A (Natural Sciences) [Internet]. 1995 Jan;9(1):7–19. Available from: http://dx.doi.org/10.35552/anujr.a.9.1.413
Hasan, Mousa Al-. “The Electronic Structure of Gax In 1-x As and InASx P1-x Using the Recursion Method.” An-Najah University Journal for Research - A (Natural Sciences) 9, no. 1 (January 1995): 7–19. https://doi.org/10.35552/anujr.a.9.1.413.
The Electronic Structure of Gax In 1-x As and InASx P1-x Using the Recursion Method
DOI:
10.35552/anujr.a.9.1.413
المؤلفون:

معلومات المقال

7 - 19

الكلمات الإفتتاحية

الملخص

The calculation of the electronic structure of Gax In 1-x As and In Asx P1-x alloys using the recursion method is reported. A five-orbitals, sp3s*, per atom model is used in the tight-binding representation of the Hamiltonian. The local density of states is calculated for Ca, In, As and P-sites in a cluster of 216 atoms. The results are in good agreement with other calculations.

Recommended Citation

BibTex RIS
Hasan, M. A.-. (1995). The Electronic Structure of Gax In 1-x As and InASx P1-x Using the Recursion Method. An-Najah University Journal for Research - A (Natural Sciences), 9(1), 7–19. https://doi.org/10.35552/anujr.a.9.1.413
[1]M. A.- Hasan, “The Electronic Structure of Gax In 1-x As and InASx P1-x Using the Recursion Method,” An-Najah University Journal for Research - A (Natural Sciences), vol. 9, no. 1, pp. 7–19, Jan. 1995, doi: 10.35552/anujr.a.9.1.413.
Hasan, Mousa Al-. “The Electronic Structure of Gax In 1-x As and InASx P1-x Using the Recursion Method.” An-Najah University Journal for Research - A (Natural Sciences), vol. 9, no. 1, Jan. 1995, pp. 7–19. Crossref, https://doi.org/10.35552/anujr.a.9.1.413.
1.Hasan MA. The Electronic Structure of Gax In 1-x As and InASx P1-x Using the Recursion Method. An-Najah University Journal for Research - A (Natural Sciences) [Internet]. 1995 Jan;9(1):7–19. Available from: http://dx.doi.org/10.35552/anujr.a.9.1.413
Hasan, Mousa Al-. “The Electronic Structure of Gax In 1-x As and InASx P1-x Using the Recursion Method.” An-Najah University Journal for Research - A (Natural Sciences) 9, no. 1 (January 1995): 7–19. https://doi.org/10.35552/anujr.a.9.1.413.
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